IRF1404ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF1404ZPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 100 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 1030 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0037 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRF1404ZPBF
IRF1404ZPBF Datasheet (PDF)
irf1404zlpbf irf1404zpbf irf1404zspbf.pdf
PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P
irf1404zpbf irf1404zspbf irf1404zlpbf.pdf
PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P
irf1404zgpbf.pdf
PD - 96236AIRF1404ZGPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 3.7ml Halogen-Free GDescription ID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low
auirf1404zstrl.pdf
PD - 97460AUTOMOTIVE GRADEAUIRF1404ZAUIRF1404ZSAUIRF1404ZLFeatures Advanced Process TechnologyHEXFET Power MOSFET Low On-ResistanceDV(BR)DSS 40V 175C Operating Temperature Fast SwitchingRDS(on) max.3.7m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified *SID (Package Limited)160A
irf1404z.pdf
PD - 11371AUTOMOTIVE MOSFETIRF1404ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 3.7m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest
auirf1404z auirf1404zs auirf1404zl.pdf
AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto
irf1404z.pdf
DIP Type MOSFETN-Channel MOSFETIRF1404Z (KRF1404Z)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax21 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54T
irf1404zs.pdf
Isc N-Channel MOSFET Transistor IRF1404ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
irf1404z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404ZIIRF1404ZFEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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