IRF1405PBF datasheet, подбор замены

 ..1. Size:258K  international rectifier
 irf1405pbf.pdf 

PD - 94969B IRF1405PbF Typical Applications HEXFET Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3m l Dynamic dv/dt Rating G l 175 C Operating Temperature ID = 169A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

 7.1. Size:179K  international rectifier
 irf1405z.pdf 

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 4.9m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processin

 7.2. Size:313K  international rectifier
 auirf1405zstrl.pdf 

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175 C Operating Temperature l Fast Switching RDS(on) max. 4.9m G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

 7.3. Size:212K  international rectifier
 auirf1405.pdf 

PD - 97691A AUTOMOTIVE GRADE AUIRF1405 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dv/dt Rating RDS(on) typ. 4.6m l 175 C Operating Temperature l Fast Switching max 5.3m G l Fully Avalanche Rated ID (Silicon Limited) 169A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 75A l Lead-Free,

 7.4. Size:154K  international rectifier
 irf1405s.pdf 

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching R

 7.5. Size:396K  international rectifier
 irf1405zlpbf irf1405zpbf irf1405zspbf.pdf 

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex

 7.6. Size:308K  international rectifier
 irf1405lpbf irf1405spbf.pdf 

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A 175 C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFE

 7.7. Size:319K  international rectifier
 irf1405zl-7ppbf irf1405zs-7ppbf.pdf 

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the latest pro

 7.8. Size:247K  international rectifier
 auirf1405zs-7p.pdf 

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the la

 7.9. Size:396K  international rectifier
 irf1405zpbf irf1405zspbf irf1405zlpbf.pdf 

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex

 7.10. Size:116K  international rectifier
 irf1405.pdf 

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive A

 7.11. Size:308K  international rectifier
 irf1405spbf irf1405lpbf.pdf 

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A 175 C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFE

 7.12. Size:345K  infineon
 auirf1405zs auirf1405zl.pdf 

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

 7.13. Size:246K  inchange semiconductor
 irf1405z.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405Z IIRF1405Z FEATURES Static drain-source on-resistance RDS(on) 4.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 7.14. Size:252K  inchange semiconductor
 irf1405s.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 7.15. Size:258K  inchange semiconductor
 irf1405zs.pdf 

Isc N-Channel MOSFET Transistor IRF1405ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 7.16. Size:246K  inchange semiconductor
 irf1405.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405 IIRF1405 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM