IXFT20N60Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXFT20N60Q
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 90 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 410 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO268
Аналог (замена) для IXFT20N60Q
IXFT20N60Q Datasheet (PDF)
ixfh20n60q ixft20n60q.pdf
IXFH 20N60Q VDSS = 600 VHiPerFETTMIXFT 20N60Q ID25 = 20 APower MOSFETs RDS(on) = 0.35 Q-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt,Low Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS C
ixfh20n80q ixfk20n80q ixft20n80q.pdf
IXFH20N80Q VDSS = 800 VHiPerFETTMIXFK20N80Q ID25 = 20 APower MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtPreliminary DataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800
ixfh20n80p ixft20n80p ixfv20n80p.pdf
IXFH 20N80PVDSS = 800 VPolarHVTM HiPerFETIXFT 20N80PID25 = 20 APower MOSFETIXFV 20N80P RDS(on) 520 m N-Channel Enhancement ModeIXFV 20N80PStrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RG
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf
HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1
ixft23n80q.pdf
IXFH23N80Q VDSS = 800 VHiPerFETTMIXFT23N80Q ID25 = 23 APower MOSFETs RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 V(TAB)VGS Continuous 30
ixft24n90p ixfh24n90p.pdf
Preliminary Technical InformationVDSS = 900VIXFH24N90PPolarTM Power MOSFETID25 = 24AIXFT24N90PHiPerFETTM RDS(on) 420m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M
ixfh26n60p ixft26n60p ixfv26n60p.pdf
IXFH26N60P VDSS = 600 VPolarHVTMIXFT26N60P ID25 = 26 APower MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement ModeIXFV26N60PS trr 200 nsFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Contin
ixft28n50q.pdf
Advanced Technical InformationIXFH 28N50Q VDSS = 500 VHiPerFETTMIXFT 28N50Q ID25 = 28 APower MOSFETsRDS(on) = 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
ixfh24n80p ixfk24n80p ixft24n80p.pdf
IXFH 24N80P VDSS = 800 VPolarHVTM HiPerFETIXFK 24N80P ID25 = 24 APower MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGSS Con
ixfh26n60q ixft26n60q.pdf
IXFH 26N60Q VDSS = 600 VHiPerFETTMIXFT 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB)VGS Continuous 20 V
ixft23n60q.pdf
IXFH 23N60Q VDSS = 600 VHiPerFETTMIXFT 23N60Q ID25 = 23 APower MOSFETs RDS(on) = 0.32 Q-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt,Low Gate Charge and CapacitancesPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; R
Другие MOSFET... IXFR80N20Q , IXFT10N100 , IXFT12N100 , IXFT12N100Q , IXFT13N80Q , IXFT14N100 , IXFT15N100 , IXFT15N80Q , 20N50 , IXFT20N80Q , IXFT24N100 , IXFT26N50Q , IXFT26N60Q , IXFT30N50 , IXFT32N50 , IXFT32N50Q , IXFT40N30Q .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918