MCP87130. Аналоги и основные параметры
Наименование производителя: MCP87130
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5.4 ns
Cossⓘ - Выходная емкость: 200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
Тип корпуса: PDFN3.3X3.3 PDFN5X6
Аналог (замена) для MCP87130
- подборⓘ MOSFET транзистора по параметрам
MCP87130 даташит
mcp87130.pdf
MCP87130 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87130 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technolog
mcp87055.pdf
MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processing Charge (QGD) technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista
mcp87090.pdf
MCP87090 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technol
mcp87050.pdf
MCP87050 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allow Charge (QGD) the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga
Другие IGBT... MCP04N60, MCP04N65, MCP87018, MCP87022, MCP87030, MCP87050, MCP87055, MCP87090, IRF9640, MCPF04N60, MCPF04N65, MCPF05N60B, MCPF08N60, MCQ4822, MCU01N80, MCU02N80, MCU04N60
History: AM2344N | MMD70R750PRH | SRT045N025H | SQ1420EEH | NCE1608N
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