SPC4516 datasheet, аналоги, основные параметры
Наименование производителя: SPC4516 📄📄
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 258 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: SOP-8P
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Аналог (замена) для SPC4516
- подборⓘ MOSFET транзистора по параметрам
SPC4516 даташит
spc4516.pdf
SPC4516 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4516 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4516b.pdf
SPC4516B N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4516B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st
spc4527.pdf
SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4527 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4567.pdf
SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
Другие IGBT... SP8M51, SP8M70, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, SPB80N03S2, SPC1016, SPC1018, AON6414A, SPC4516B, SPC4527, SPC4533, SPC4533W, SPC4539, SPC4539B, SPC4567, SPC4567W
Параметры MOSFET. Взаимосвязь и компромиссы
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