SPC4533W. Аналоги и основные параметры
Наименование производителя: SPC4533W
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9.8 ns
Cossⓘ - Выходная емкость: 81 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SOP-8P
Аналог (замена) для SPC4533W
- подборⓘ MOSFET транзистора по параметрам
SPC4533W даташит
spc4533w.pdf
SPC4533W N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density, DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4533.pdf
SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4539.pdf
SPC4539 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4539b.pdf
SPC4539B N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st
Другие IGBT... SPB42N03S2L-13, SPB80N03S2, SPC1016, SPC1018, SPC4516, SPC4516B, SPC4527, SPC4533, IRFB4115, SPC4539, SPC4539B, SPC4567, SPC4567W, SPC5604, SPC6332, SPC6601, SPC6602
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