SPC6604. Аналоги и основные параметры

Наименование производителя: SPC6604

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.15 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm

Тип корпуса: TSOP-6P

Аналог (замена) для SPC6604

- подборⓘ MOSFET транзистора по параметрам

 

SPC6604 даташит

 ..1. Size:234K  syncpower
 spc6604.pdf pdf_icon

SPC6604

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.1. Size:293K  syncpower
 spc6605.pdf pdf_icon

SPC6604

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6605 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-state

 8.2. Size:238K  syncpower
 spc6602.pdf pdf_icon

SPC6604

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6602 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.3. Size:263K  syncpower
 spc6601.pdf pdf_icon

SPC6604

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6601 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SPC4539, SPC4539B, SPC4567, SPC4567W, SPC5604, SPC6332, SPC6601, SPC6602, 2SK3878, SPC6605, SPD30N03S2L-10, SPD50N03S2-07, SPD50N03S2L-06, SPD50N03S2L-06T, SPI80N06S-80, SPM1007, SPM1008