Справочник MOSFET. SPD30N03S2L-10

 

SPD30N03S2L-10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPD30N03S2L-10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0146 Ohm
   Тип корпуса: PG-TO252-3

 Аналог (замена) для SPD30N03S2L-10

 

 

SPD30N03S2L-10 Datasheet (PDF)

 ..1. Size:631K  infineon
 spd30n03s2l-10 .pdf

SPD30N03S2L-10 SPD30N03S2L-10

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

 ..2. Size:586K  infineon
 spd30n03s2l-10.pdf

SPD30N03S2L-10 SPD30N03S2L-10

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

 2.1. Size:682K  infineon
 spd30n03s2l-20.pdf

SPD30N03S2L-10 SPD30N03S2L-10

GSPD30N03S2L-20 OptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement modeRDS(on) 20 m Logic LevelID 30 APG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantMarkingType Package

 2.2. Size:651K  infineon
 spd30n03s2l-07.pdf

SPD30N03S2L-10 SPD30N03S2L-10

SPD30N03S2L-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS N-Channel30 V Enhancement modeRDS(on) 6.7 m Logic LevelID 30 APG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated. Pb-free lead plating; RoHS compliantType Package Marking

 3.1. Size:243K  inchange semiconductor
 spd30n03s2l.pdf

SPD30N03S2L-10 SPD30N03S2L-10

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2LFEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

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