Справочник MOSFET. SQJ460EP

 

SQJ460EP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SQJ460EP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 71 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 393 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0096 Ohm
   Тип корпуса: POWERPAK-SO-8L

 Аналог (замена) для SQJ460EP

 

 

SQJ460EP Datasheet (PDF)

 ..1. Size:182K  vishay
 sqj460ep.pdf

SQJ460EP SQJ460EP

SQJ460EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0096 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0120 AEC-Q101 QualifieddID (A) 32 100 % Rg and UIS TestedConfiguration Single Compliant to R

 8.1. Size:215K  vishay
 sqj460aep.pdf

SQJ460EP SQJ460EP

SQJ460AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.0087 Material categorization: RDS(on) () at VGS = 4.5 V 0.0094for definitions of compliance please see ID (A) 32 www.vishay.com/doc?99912 Configuration SinglePacka

 9.1. Size:149K  vishay
 sqj461ep.pdf

SQJ460EP SQJ460EP

SQJ461EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.021 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Single Compliant

 9.2. Size:149K  vishay
 sqj463ep.pdf

SQJ460EP SQJ460EP

SQJ463EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.015 100 % Rg and UIS TestedID (A) - 30 Compliant to RoHS Directive 2002

 9.3. Size:147K  vishay
 sqj469ep.pdf

SQJ460EP SQJ460EP

SQJ469EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.025 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.029 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compliant to

 9.4. Size:180K  vishay
 sqj464ep.pdf

SQJ460EP SQJ460EP

SQJ464EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.020 Material categorization:ID (A) 24For definitions of compliance please see Configuration Singlewww

 9.5. Size:192K  vishay
 sqj465ep.pdf

SQJ460EP SQJ460EP

SQJ465EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedID (A) - 8 Compliant to RoHS Directive 200

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXTA48P05T

 

 
Back to Top