Справочник MOSFET. SQJ465EP

 

SQJ465EP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SQJ465EP
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: POWERPAK-SO-8L

 Аналог (замена) для SQJ465EP

 

 

SQJ465EP Datasheet (PDF)

 ..1. Size:192K  vishay
 sqj465ep.pdf

SQJ465EP SQJ465EP

SQJ465EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedID (A) - 8 Compliant to RoHS Directive 200

 9.1. Size:149K  vishay
 sqj461ep.pdf

SQJ465EP SQJ465EP

SQJ461EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.021 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Single Compliant

 9.2. Size:149K  vishay
 sqj463ep.pdf

SQJ465EP SQJ465EP

SQJ463EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.015 100 % Rg and UIS TestedID (A) - 30 Compliant to RoHS Directive 2002

 9.3. Size:182K  vishay
 sqj460ep.pdf

SQJ465EP SQJ465EP

SQJ460EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0096 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0120 AEC-Q101 QualifieddID (A) 32 100 % Rg and UIS TestedConfiguration Single Compliant to R

 9.4. Size:147K  vishay
 sqj469ep.pdf

SQJ465EP SQJ465EP

SQJ469EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.025 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.029 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compliant to

 9.5. Size:215K  vishay
 sqj460aep.pdf

SQJ465EP SQJ465EP

SQJ460AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.0087 Material categorization: RDS(on) () at VGS = 4.5 V 0.0094for definitions of compliance please see ID (A) 32 www.vishay.com/doc?99912 Configuration SinglePacka

 9.6. Size:180K  vishay
 sqj464ep.pdf

SQJ465EP SQJ465EP

SQJ464EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.020 Material categorization:ID (A) 24For definitions of compliance please see Configuration Singlewww

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