SRM4N65U - Даташиты. Аналоги. Основные параметры
Наименование производителя: SRM4N65U
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 10 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 65 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.47 Ohm
Тип корпуса: TO-126F
Аналог (замена) для SRM4N65U
SRM4N65U Datasheet (PDF)
srm4n65.pdf
Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n60.pdf
Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n70.pdf
Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
Другие MOSFET... SRM20N65TC , SRM2N60 , SRM4N60D1 , SRM4N60DTR , SRM4N60U , SRM4N60TF , SRM4N65D1 , SRM4N65DTR , EMB04N03H , SRM4N65TF , SRM4N70 , SRM6N60D1 , SRM6N60DTR , SRM6N60TF , SRM6N70 , SRM7N60 , SRM7N65 .
History: IPW60R250CP | IXTP15P15T
History: IPW60R250CP | IXTP15P15T
Список транзисторов
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