SRM7N65. Аналоги и основные параметры

Наименование производителя: SRM7N65

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 27 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 112 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.22 Ohm

Тип корпуса: TO-220F

Аналог (замена) для SRM7N65

- подборⓘ MOSFET транзистора по параметрам

 

SRM7N65 даташит

 ..1. Size:199K  sanrise-tech
 srm7n65.pdf pdf_icon

SRM7N65

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65 General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.1. Size:295K  sanrise-tech
 srm7n65e1.pdf pdf_icon

SRM7N65

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65 General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 8.1. Size:199K  sanrise-tech
 srm7n60.pdf pdf_icon

SRM7N65

Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60 General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

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