Справочник MOSFET. SRM7N65D1-E1

 

SRM7N65D1-E1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SRM7N65D1-E1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-251
     - подбор MOSFET транзистора по параметрам

 

SRM7N65D1-E1 Datasheet (PDF)

 7.1. Size:295K  sanrise-tech
 srm7n65e1.pdf pdf_icon

SRM7N65D1-E1

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 7.2. Size:199K  sanrise-tech
 srm7n65.pdf pdf_icon

SRM7N65D1-E1

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 8.1. Size:199K  sanrise-tech
 srm7n60.pdf pdf_icon

SRM7N65D1-E1

Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

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