SRM7N65D1-E1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SRM7N65D1-E1
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 52 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.6 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 95 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO-251
Аналог (замена) для SRM7N65D1-E1
SRM7N65D1-E1 Datasheet (PDF)
srm7n65e1.pdf
Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm7n65.pdf
Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm7n60.pdf
Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
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