IXTH14N100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTH14N100
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 360 W
Предельно допустимое напряжение сток-исток |Uds|: 1000 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 195 nC
Время нарастания (tr): 21 ns
Выходная емкость (Cd): 400 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.82 Ohm
Тип корпуса: TO247
Аналог (замена) для IXTH14N100
IXTH14N100 Datasheet (PDF)
ixth14n100.pdf
IXTH 14N100 VDSS = 1000 VMegaMOSTMFET ID25 = 14 ARDS(on) = 0.82 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C14 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 56 A
ixth14n80.pdf
IXTH 14N80 VDSS = 800 VMegaMOSTMFETID25 = 14 ARDS(on) = 0.70 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC = 25C14 AIDM TC = 25C, pulse width limited by TJM 56 APD TC = 25C 300 WG
ixth140p10t ixtt140p10t.pdf
Preliminary Technical InformationTrenchPTM VDSS = -100VIXTT140P10TPower MOSFETs ID25 = -140AIXTH140P10T RDS(on) 12m P-Channel Enhancement ModeTO-268 (IXTT)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 VVGSS Continuous 15 V
ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf
ixtt12n150 ixth12n150.pdf
High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG
ixth15n70.pdf
IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N
ixth1n450hv.pdf
High Voltage VDSS = 4500VIXTT1N450HVPower MOSFETID25 = 1AIXTH1N450HV RDS(on) 80 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient 30
ixth16p20.pdf
IXTH 16P20VDSS = -200 VStandard Power MOSFETID25 = -16 AP-Channel Enhancement ModeRDS(on) = 0.16 Avalanche RatedPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -200 VVDGR TJ = 25C to 150C; RGS = 1 M -200 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -16 AIDM TC = 25
ixth16n50d2 ixtt16n50d2.pdf
Advance Technical InformationDepletion Mode VDSX = 500VIXTH16N50D2MOSFET ID(on) > 16AIXTT16N50D2 RDS(on) 240m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C, RGS = 1M 500 VVGSX Continuous 20 VTO-268 (IXTT)VGSM Transient 30 VPD TC = 2
ixth160n10t ixtq160n10t.pdf
Preliminary Technical InformationIXTH160N10T VDSS = 100 VTrenchMVTMIXTQ160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 VTO-3P (IXTQ)
ixth182n055t ixtq182n055t.pdf
Preliminary Technical InformationIXTH182N055T VDSS = 55 VTrenchMVTMIXTQ182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-3P
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf
Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30
ixth180n10t ixtq180n10t.pdf
Preliminary Technical InformationIXTH180N10T VDSS = 100 VTrenchMVTMIXTQ180N10T ID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C 100 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 VTO
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine
ixth160n075t ixtq160n075t.pdf
Preliminary Technical InformationIXTH160N075T VDSS = 75 VTrenchMVTMIXTQ160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 160 AD (TAB
ixth180n085t ixtq180n085t.pdf
Preliminary Technical InformationIXTH180N085T VDSS = 85 VTrenchMVTMIXTQ180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VTO-
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf
VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf
VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11
ixth12n50a ixtm12n50a.pdf
VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC
ixth11p50 ixtt11p50.pdf
VDSS = -500 VStandard Power MOSFETID25 = -11 AP-Channel Enhancement ModeIXTH 11P50Avalanche RatedRDS(on) = 0.75 IXTT 11P50TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C -11 AIDM TC = 25C, p
ixta1n170dhv ixth1n170dhv.pdf
Advance Technical InformationDepletion Mode VDSX = 1700VIXTA1N170DHVMOSFET ID(on) > 1AIXTH1N170DHV RDS(on) 16 N-ChannelTO-263HV (IXTA)GS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VVGSM Transient 30 V
ixth130n10t ixtq130n10t.pdf
VDSS = 100VIXTH130N10TTrenchMVTMID25 = 130AIXTQ130N10TPower MOSFET RDS(on) 9.1m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 VD(TAB)SVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 20 VTO-3P (IXTQ)ID25 TC = 25C 130 AILRMS Lead C
ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf
Preliminary Technical InformationHigh Voltage VDSS = 2000VIXTA1N200P3HVPower MOSFETID25 = 1.0AIXTH1N200P3HV RDS(on) 40 IXTH1N200P3N-Channel Enhancement ModeTO-263HV (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M
ixth152n085t ixtq152n085t.pdf
Preliminary Technical InformationIXTH152N085T VDSS = 85 VTrenchMVTMIXTQ152N085T ID25 = 152 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25C 152 AILRMS L
ixth130n20t.pdf
Preliminary Technical InformationIXTH130N20T VDSS = 200VTrenchHVTMID25 = 130APower MOSFET RDS(on) 16m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C; RGS = 1M 200 VVGSM Transient 30 VID25 TC = 25C 130 AILRMS Lead Current Limit, RMS
ixth12n150 ixtt12n150.pdf
High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient
ixth16n10d2 ixtt16n10d2.pdf
Advance Technical InformationDepletion Mode VDSX = 100VIXTH16N10D2MOSFET ID(on) > 16AIXTT16N10D2 RDS(on) 64m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 100 VVDGX TJ = 25C to 150C, RGS = 1M 100 VVGSX Continuous 20 VVGSM Transient 30 V TO-268 (IXTT)PD TC = 25C 695
ixth160n15t.pdf
Preliminary Technical InformationIXTH160N15T VDSS = 150 VTrenchHVTMID25 = 160 APower MOSFET RDS(on) 9.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 150 VVDGR TJ = 25C to 175C; RGS = 1M 150 VVGSM Transient 30 VID25 TC = 25C 160 AG(TAB)ILRMS Lead Curr
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf
Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V
ixth1n100 ixtt1n100.pdf
Advance Technical InformationVDSS = 1000 VIXTH 1N100High Voltage MOSFETID25 = 1.5 AIXTT 1N100 RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC
ixth12n120.pdf
VDSS = 1200 VIXTH 12N120ID (cont) = 12 APower MOSFET, Avalanche Rated RDS(on)= 1.4 High VoltagePreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 30 VD (TAB)VGSM Transient 40 VID25 TC = 25C12 AIDM TC = 25C, pulse width limit
ixth1n300p3hv ixtt1n300p3hv.pdf
Preliminary Technical InformationHigh Voltage VDSS = 3000VIXTT1N300P3HVPower MOSFETID25 = 1.00AIXTH1N300P3HV RDS(on) 50 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VTO-247HV (IXTH)VDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS
ixth1r8n220p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 2200VIXTH1R8N220P3HVPower MOSFETID25 = 1.8A RDS(on) 21.5 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2200 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2200 VVGSS Continuous 20 VG = Gate D = Dra
ixth1r4n250p3.pdf
Advance Technical InformationHigh Voltage VDSS = 2500VIXTH1R4N250P3Power MOSFETID25 = 1.4A RDS(on) 28 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsD TabSVDSS TJ = 25C to 150C 2500 VVDGR TJ = 25C to 150C, RGS = 1M 2500 VG = Gate D = DrainVGSS
ixth15n50l2-ixtp15n50l2.pdf
Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30
ixth13n110.pdf
IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52
ixth130n10t.pdf
isc N-Channel MOSFET Transistor IXTH130N10TFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV G
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
