ST2305 - Даташиты. Аналоги. Основные параметры

ST2305 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

WST2305AP-Ch MOSFETGeneral Description Product SummeryThe WST2305A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4A-20V 60mand gate charge for most of the synchronous buck converter applications . Applications The WST2305A meet the RoHS and Green Product requirement,with full function Hi

WST2305 P-Ch MOSFETGeneral Description Product SummeryThe WST2305 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON and -4.4A-20V 50mgate charge for most of the synchronous buck converter applications . Applications The WST2305 meet the RoHS and Green Product requirement,with full function H