ST3400SRG. Аналоги и основные параметры
Наименование производителя: ST3400SRG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 240 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SOT-23
Аналог (замена) для ST3400SRG
- подборⓘ MOSFET транзистора по параметрам
ST3400SRG даташит
st3400srg.pdf
ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and
st3400s23rg.pdf
ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon
wst3400s.pdf
WST3400S N-Ch MOSFET General Description Product Summery The WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6A gate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu
jst3400.pdf
JST3400 30V,5.8A N-Channel Mosfet FEATURES SOT-23 RDS(ON) 33m @VGS=10V RDS(ON) 39m @VGS=4.5V RDS(ON) 60m @VGS=2.5V APPLICATIONS Load/Power Switching Interfacing Switching MARKING N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V 12 GS I 5.8 D Continuous Drain
Другие MOSFET... ST2305A , ST2318SRG , ST2319SRG , ST2341A , ST2341S23RG , ST2342 , ST25N10 , ST3400S23RG , STP75NF75 , ST3401M23RG , ST3401SRG , ST3406 , ST3406SRG , ST3407S23RG , ST3407SRG , ST3413A , ST3414A .
History: ME95N03 | 2SK1562 | MS5N100FE | HD70N08 | ASDM3020
History: ME95N03 | 2SK1562 | MS5N100FE | HD70N08 | ASDM3020
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