ST75N75 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ST75N75
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 93 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 30 nC
trⓘ - Время нарастания: 36 ns
Cossⓘ - Выходная емкость: 540 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: TO-220
ST75N75 Datasheet (PDF)
st75n75.pdf
ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 75V/40.0A, RDS(ON) = 8m (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-r
ost75n65hnf.pdf
OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost75n65htnf.pdf
OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsxf.pdf
OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hemf.pdf
OST75N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hm2f.pdf
OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsvf.pdf
OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n120hm2f.pdf
OST75N120HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N120HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
ost75n65hszf.pdf
OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hem2f.pdf
OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
ost75n65hzf.pdf
OST75N65HZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost75n65hsnf.pdf
OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hmf.pdf
OST75N65HMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost75n65hsmf.pdf
OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hlmf.pdf
OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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