SUD25N04-25 - описание и поиск аналогов

SUD25N04-25 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 40 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD25N04-25 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Sour

SUD25N06-45L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 25 60 60 0.045 @ VGS = 4.5 V 22 D TO-252 G Drain Connected to Tab G D S Top View S Order Number SUD25N06-45L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage

SUD25N06-45L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.052 at VGS = 10 V 25 150 PWM Optimized 0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Primary Side Switch D Drain Connec

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.052 at VGS = 10 V 25 150 PWM Optimized 0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Primary Side Switch D Drain Connec

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD25N15-52 FEATURES TrenchFET Power MOSFET 175 Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION D Primary Side Switch ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD25N15-52-E3 FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION D Primary Side Switch ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V