SUD50N10-18PVishay SiliconixN-Channel 100 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 50 48 nC Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-252APPLICATIONSD Primary Side Switch Is

New ProductSUD50N10-34PVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % UIS TestedRoHS 0.034 at VGS = 10 V 20100 24 nC COMPLIANT 0.040 at VGS = 6.0 V 20APPLICATIONS LCD TV Inverter LCD BacklightTO-252DGDrain Connected to TabG D STop ViewSOrde

SUD50N10-34Pwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unles

SUD50N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested0.007 @ VGS = 10 V 2030300.010 @ VGS = 4.5 V 16DTO-252GDrain Connected to TabG D STop ViewOrdering Information: SSUD50N03-07SUD50N03-07E3 ( Lead Free) N-Channel MOS

New ProductSUD50N04-37PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.) 100 % UIS TestedRoHS 0.037 at VGS = 10 V 840 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC ConverterTO-252DGDrain Connected t

SUD50N03-11Vishay SiliconixN-Channel 30-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Maximum Junction TemperatureRoHS0.011 at VGS = 10 V 50COMPLIANT 30 100 % Rg Tested0.017 at VGS = 4.5 V 43DTO-252GDrain Connected to TabG D SSTop ViewOrdering Information: SUD50N03-11-E3 (Lead

New ProductSUD50N06-07LVishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0074 at VGS = 10 V RoHS 9660COMPLIANT 0.0088 at VGS = 4.5 V 88DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-07L-E3 (Lead (Pb)-

SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25

SUD50N025-09BPNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0086 @ VGS = 10 V 62 RoHS25 18 5 nC25 18.5 nCCOMPLIANT0.012 @ VGS = 4.5 V 52APPLICATIONSD DC/DC Conversion, High-Side Desktop PCTO-252DGDrain Connected to TabG D

SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

SUD50N04-16PVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.016 at VGS = 10 V 20COMPLIANT 40 15.6 nC0.018 at VGS = 4.5 V 20APPLICATIONS LCD TV Inverter Secondary Synchronous RectificationTO-252DGDrain Connected to

SUD50N02-09PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)aD PWM Optimized for High EfficiencyD 100% Rg Tested0.0095 @ VGS = 10 V 2020200.017 @ VGS = 4.5 V 15 APPLICATIONSD High-Side Synchronous Buck DC/DCConversion- DesktopDTO-252- ServerGDrain Conn

SUD50N04-8m8PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET40 16 nC0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/ECA

SUD50N03-06PVishay SiliconixN-Channel 30-V (D-S) 175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175 _C Junction TemperatureVDS (V) rDS(on) (W) ID (A)bD Optimized for Low-Side Synchronous Rectifier *Operation0.0065 at VGS = 10 V 84b3030 D 100 % Rg Tested0.0095 at VGS = 4.5 V 59bAPPLICATIONSD DC/DC ConvertersD Synchronous RectifiersTO-252DDr

New ProductSUD50N04-05LVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0054 at VGS = 10 V RoHS 11540 COMPLIANT 0.0069 at VGS = 4.5 V 102DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N04-05L-E3 (Lead (Pb)

SUD50N03-7m3PNew ProductVishay SiliconixN-Channel 30-V (D-S) WFETFEATURESPRODUCT SUMMARY Low Qgd WFET TechnologyVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0073 at VGS = 10 V 50 RoHS30 15.7 nCCOMPLIANT0.0087 at VGS = 4.5 V 50APPLICATIONS DC/DC Conversion, High-Side- Notebook CPU core TO-252- VRMDDrain Connected to T

SUD50N025-06PNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0062 @ VGS = 10 V 7825 20 5 nC25 20.5 nC0.010 @ VGS = 4.5 V 62APPLICATIONSD DC/DC Conversion, Low-Side- Desktop PCTO-252DGDrain Connected to TabG D STop ViewSOrd

SUD50NP04-94New ProductVishay SiliconixComplementary N- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg and UIS TestedRoHS0.041 at VGS = 10 V 8N-Channel 40 8 COMPLIANT0.045 at VGS = 4.5 V 8APPLICATIONS0.053 at VGS = - 10 V - 8 CCFL InverterP-Channel - 40 90.072 at VG

SUD50N04-09HVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURES TrenchFET Power MOSFETSPRODUCT SUMMARY 175 C Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)c Qg (Typ) RoHS High Threshold Voltage At High TemperatureCOMPLIANT 0.009 at VGS = 10 V 40 50 55TO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N04-

SUD50N024-09PVishay SiliconixN-Channel 22-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)dD PWM Optimized for High Efficiency0.0095 @ VGS = 10 V 4924c24cAPPLICATIONS0.017 @ VGS = 4.5 V 36D High-Side Synchronous Buck DC/DCDConversionTO-252- Desktop- ServerGDrain Connected to Tab

New ProductSUD50NP04-77PVishay SiliconixComplementary N- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.) 100 % UIS TestedRoHS0.037 at VGS = 10 V 8COMPLIANT N-Channel 40 260.046 at VGS = 4.5 V 8APPLICATIONS0.040 at VGS = - 10 V - 8 Backlight Inverter for LCD DisplayP-Channel

New ProductSUD50N06-08HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)c Qg (Typ) 175 C Junction Temperature0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High TemperatureTO-252DGDrain Connected to TabG D STop ViewSOrdering In

SUD50N03-09PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)bAvailable Optimized for High- or Low-Side0.0095 at VGS = 10 V 63bRoHS* 100 % Rg Tested30COMPLIANT0.014 at VGS = 4.5 V 52bAPPLICATIONS DC/DC Converters Synchronous RectifiersTO-252DDrain Connected to T

SUD50N03-16PNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD PWM OptimizedVDS (V) rDS(on) (W) ID (A)aD 100% Rg Tested0.016 @ VGS = 10 V 15APPLICATIONS30300.024 @ VGS = 4.5 V 12D High-Side DC/DC- Desktop- ServerDD DDR DC/DC ConverterTO-252GDrain Connected to TabG D STop ViewSOrdering Inform

SUD50N04-8m8PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET40 16 nC0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/ECA

SUD50NP04-62New ProductVishay SiliconixComplementary N- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg and UIS TestedRoHS0.030 at VGS = 10 V 8COMPLIANTN-Channel 40 9.60.034 at VGS = 4.5 V 8APPLICATIONS0.032 at VGS = - 10 V - 8 CCFL InverterP-Channel - 40 210.041 a

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.0093 at VGS = 10 V 50RoHS*600.0122 at VGS = 4.5 V 50 COMPLIANTTO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-09LSUD50N06

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.0093 at VGS = 10 V 50 Material categorization:600.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912TO-252DGDrain Connected

SUD50N03-09PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)bAvailable Optimized for High- or Low-Side0.0095 at VGS = 10 V 63bRoHS* 100 % Rg Tested30COMPLIANT0.014 at VGS = 4.5 V 52bAPPLICATIONS DC/DC Converters Synchronous RectifiersTO-252DDrain Connected to T

SUD50N03-10SiliconixN-Channel 30-V (D-S), 175_C MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V "1530300.019 @ VGS = 4.5 V "12DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N03-10N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-

SUD50N03-12PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 100 % Rg and UIS Tested0.0120 at VGS = 10 V 17.5 Compliant to RoHS Directive 2002/95/EC300.0175 at VGS = 4.5 V 14.5TO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N03-12P-E3 (Lead (PB) fr

SUD50N03-06APNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D Optimized for LowSide SynchronousRectifier Operation0.0057 @ VGS = 10 V 90 RoHS30 3030 30COMPLIANTD 100% Rg Tested0.0078 @ VGS = 4.5 V 77APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersTO-252D

SUD50N02-06PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0060 at VGS = 10 V PWM Optimized for High Efficiency26200.0095 at VGS = 4.5 V 100 % Rg Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck DC/DC C

SUD50N024-06PNew ProductVishay SiliconixN-Channel 22-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)d D 175_C Junction TemperatureD PWM Optimized for High Efficiency0.006 @ VGS = 10 V 8024C24CAPPLICATIONS0.0095 @ VGS = 4.5 V 64D Synchronous Buck DC/DC Conversion- DesktopD - ServerTO-252GDrain Connected to Tab

SUD50N04-8M8Pwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIM

SUD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim