New ProductSUD50P08-25LVishay SiliconixP-Channel 80-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ)RoHS0.0252 at VGS = - 10 V - 50COMPLIANT- 80 55 nC0.029 at VGS = - 4.5 V - 47TO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P08-25L-E3 (Lead (Pb)-free) P-Channel MOSFET

New ProductSUD50P08-26Vishay SiliconixP-Channel 80-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ)RoHS0.026 at VGS = - 10 V - 50 102 nC- 80COMPLIANTTO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P08-26-E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA =

New ProductSUD50P04-13LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) 175 C Junction Temperature0.013 at VGS = - 10 V - 60aRoHS- 40COMPLIANT 0.022 at VGS = - 4.5 V - 48STO-252GDrain Connected to TabG D STop ViewDOrdering Information: SUD50P04-13L-E3 (Lead (Pb)-

SUD50P04-15New ProductVishay SiliconixP-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.015 @ VGS = 10 V 5040400.023 @ VGS = 4.5 V 45STO-252GDrain Connected to TabG D STop ViewOrder Number: DSUD50P04-15P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrai

SUD50P04-23Vishay SiliconixP-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg TestedRoHS 0.023 at VGS = 10 V - 20COMPLIANT - 40 20.6 nC0.030 at VGS = 4.5 V - 20APPLICATIONS LCD TV InverterTO-252SGDrain Connected to TabG D STop ViewDP-Channel MOSFETOrdering

SUD50P06-15Vishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.015 at VGS = - 10 V For definitions of compliance please see- 50d- 60www.vishay.com/doc?999120.020 at VGS = - 4.5 V - 50dAPPLICATIONSTO-252 Load SwitchSGDrain Connected to TabDG STop V

New ProductSUD50P04-40PVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.) 100 % UIS TestedRoHS0.040 at VGS = - 10 V - 8COMPLIANT - 40 17 nC0.050 at VGS = - 4.5 V - 8APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC ConverterSTO-252GDrain Connec

SUD50P06-15Vishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.015 at VGS = - 10 V - 50dCOMPLIANT - 600.020 at VGS = - 4.5 V - 50dAPPLICATIONS Load SwitchSTO-252GDrain Connected to TabG D STop ViewDP-Channel MOSFETOrdering Information: SUD50P06-15-GE

SUD50P04-09LVishay SiliconixP-Channel 40 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A)d 175 C Junction Temperature0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC- 400.0145 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop View DOrdering Information: SUD50P04

SUD50P06-15LVishay SiliconixP-Channel 60 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.015 at VGS = - 10 V - 50d- 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC0.020 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop ViewDOrdering Informa

SUD50P04-08www.vishay.comVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) 100 % Rg and UIS tested0.0081 at VGS = -10 V -50 d-40 60 Material categorization:0.0117 at VGS = -4.5 V -48 dfor definitions of compliance please see www.vishay.com/doc?99912 TO-252TOAPPLICATIONS

SUD50P04-13Lwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,

SUD50P06-15www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

SUD50P06-15L-GE3www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

SUD50P04-09L-E3www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25

SUD50P04-08www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,

Isc P-Channel MOSFET Transistor SUD50P06-15FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD50P04-08FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS