SUM110N08-07P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SUM110N08-07P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 208.3 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 110 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 69 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 580 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
Тип корпуса: TO-263
Аналог (замена) для SUM110N08-07P
SUM110N08-07P Datasheet (PDF)
sum110n08-07p.pdf
SUM110N08-07PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.007 at VGS = 10 V75 Material categorization:110d 69For definitions of compliance please seewww.vishay.com/doc?99912TO-263 APPLICATIONS Synchronous RectificationDGDG STop Vie
sum110n04-05h.pdf
SUM110N04-05HVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0053 at VGS = 10 V 40 95110COMPLIANT High Threshold Voltage at High TemperatureDTO-263GG D STop View SN-Channel MOSFETOrdering Information: SUM110N04-05H-E
sum110n04-2m1p.pdf
New ProductSUM110N04-2m1PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0021 at VGS = 10 V 110COMPLIANT 40 240 nC0.0024 at VGS = 4.5 V 110APPLICATIONS Synchronous Rectification Power SuppliesDTO-263 GG D S Top View S
sum110n04-04.pdf
SUM110N04-04Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature40 0.0035 at VGS = 10 V 110aRoHS*COMPLIANTTO-263DGG D STop ViewSOrdering Information: SUM110N04-04SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RA
sum110n06-3m4l.pdf
SUM110N06-3m4LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0034 at VGS = 10 V COMPLIANT 60110a0.0041 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS
sum110n04-02l.pdf
SUM110N04-02LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS*40110a0.0038 at VGS = 4.5 V COMPLIANTDTO-263 GG D S Top View SOrdering Information: SUM110N04-02LSUM110N04-02L-E3 (Lead (Pb)-fr
sum110n06-3m9h.pdf
SUM110N06-3m9HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V 60110a 200COMPLIANT Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % Rg TestedDTO-263GG D STop Vi
sum110n04-03p.pdf
SUM110N04-03PVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0031 at VGS = 10 V 40110aRoHS* Package with Low Thermal ResistanceCOMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg TestedDTO
sum110n05-06l.pdf
SUM110N05-06LVishay SiliconixN-Channel 55-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ)Available 175 C Junction Temperature0.006 at VGS = 10 V 110RoHS*55 65 Low Thermal Resistance Package0.0085 at VGS = 4.5 V 92 COMPLIANTAPPLICATIONS IndustrialDTO-263GG D STop ViewS
sum110n04-2m3l.pdf
SUM110N04-2m3LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0023 at VGS = 10 V COMPLIANT 40110a0.003 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N04-2m3L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS T
sum110n04-03.pdf
SUM110N04-03Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available Package with Low Thermal Resistance0.0028 at VGS = 10 V40110aRoHS*COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM110N04-03SUM110N04-03-E3 (Lead (Pb)-free)N-Channel MOSFETABSOLUTE MA
sum110n03-03p.pdf
SUM110N03-03PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)aD Optimized for Low-Side Synchronous Rectifier0.0026 @ VGS = 10 V 110aD 100% Rg Tested30300.004 @ VGS = 4.5 V 110aAPPLICATIONSD Desktop or Server CPU CoreDTO-263DRAIN connected to TABGG D
sum110n03-04p.pdf
SUM110N03-04PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESD TrenchFETr Power MOSFETD 175_C Junction TemperaturePRODUCT SUMMARYD Optimized for Low-Side Synchronous Rectifier OperationD New Package with Low Thermal ResistanceV(BR)DSS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0042 @ VGS = 10 V 11030300.0065 @ VGS = 4.5 V 77 APPLICATIONSD DC/DC C
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