Справочник MOSFET. SUM90N08-4M8P

 

SUM90N08-4M8P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUM90N08-4M8P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 571 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SUM90N08-4M8P

 

 

SUM90N08-4M8P Datasheet (PDF)

 ..1. Size:84K  vishay
sum90n08-4m8p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUM90N08-4m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0048 at VGS = 10 VRoHS90d75 105 100 % UIS Tested COMPLIANT0.006 at VGS = 8 V90dAPPLICATIONS Power Supply- Half-Bridge- Secondary Synchronous Rectification Industri

 5.1. Size:165K  vishay
sum90n08-6m2p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUM90N08-6m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0062 at VGS = 10 V75 RoHS90d 75 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top Vie

 5.2. Size:168K  vishay
sum90n08-7m6p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUM90N08-7m6PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature0.0076 at VGS = 10 V75 RoHS90d 58 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top V

 7.1. Size:76K  vishay
sum90n06-5m0p sup90n06-5m0p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG

 7.2. Size:77K  vishay
sum90n06-4m4p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUM90N06-4m4PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0044 at VGS = 10 V60 RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification Industrial OR-ingDTO-263 GG

 7.3. Size:165K  vishay
sum90n06-5m5p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUM90N06-5m5PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0055 at VGS = 10 V60 RoHS90d 78.5 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top V

 7.4. Size:114K  vishay
sum90n03.pdf

SUM90N08-4M8P
SUM90N08-4M8P

New ProductSUM90N03-2m2PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0022 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0027 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerDTO-263GG D STop ViewSOrdering Information: SUM90N03-2m

 7.5. Size:177K  vishay
sum90n03-2m2p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing

 7.6. Size:181K  vishay
sum90n04-3m3p.pdf

SUM90N08-4M8P
SUM90N08-4M8P

New ProductSUM90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg and UIS TestedRoHS Compliant to RoHS Directive 2002/95/EC COMPLIANT 0.0033 at VGS = 10 V9040 870.0041 at VGS = 4.5 V90APPLICATIONS Power Supply- Secondary Synchronous Rectifica

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History: SVF1N60B

 

 
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