SUP75N03-04 - описание и поиск аналогов

SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Rated Maximum Junction 30 0.004 75a RoHS* Temperature COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G DRAIN connected to TAB G D S Top View SUB75N03-04 G D S Top View SUP75N03-04 S Or

SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 30 30 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET SUP75N03-07 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Dra

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a Continuous

SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a

SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 40 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L Top View N-Channel MOSFET SUP75N04-05L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo

SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View N-Channel MOSFET SUP75N08-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET

SUP/SUB75N05-06A New Product Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View N-Channel MOSFET Ordering Information SUP75N05-06A Ordering Information SUB75N05-06A ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symb

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET

SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.007 @ VGS = 10 V a 55 "75 a 55 "75 0.009 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-07 Top View N-Channel MOSFET SUP75N05-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter S

SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L Top View N-Channel MOSFET SUP75N08-09L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter

SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 75 60 60 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET SUP75N06-12L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit

SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75

SUP75N08-10 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backl