MMBFJ305. Аналоги и основные параметры

Наименование производителя: MMBFJ305

Тип транзистора: JFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.225 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.008 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 300 Ohm

Тип корпуса: SOT-23

Аналог (замена) для MMBFJ305

- подборⓘ MOSFET транзистора по параметрам

 

MMBFJ305 даташит

 ..1. Size:120K  fairchild semi
 mmbfj305.pdf pdf_icon

MMBFJ305

July 2011 MMBFJ305 N-Channel RF Amplifier SOT-23 Features G This device is designed primarily for electronic switching S applications such as low On Resistance analog switching. Marking 6Q Sourced from process 50. D Note Drain & Source are interchangeable. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage

 7.1. Size:165K  motorola
 mmbfj309 mmbfj310.pdf pdf_icon

MMBFJ305

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 N Channel 2 SOURCE MMBFJ310LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc CASE 318 08, STYLE 10 Gate Source Voltage VGS 25 Vdc SOT 23 (TO 236AB) Gate Current IG 10 mAdc THERMAL CHARACTERISTICS

 7.2. Size:207K  fairchild semi
 j309 j310 mmbfj309 mmbfj310.pdf pdf_icon

MMBFJ305

December 2010 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. J309 MMBFJ309 J310 MMBFJ310 G S SOT-23 G TO-92 Mark MMBFJ309

 7.3. Size:144K  onsemi
 mmbfj309lt1 mmbfj310lt1.pdf pdf_icon

MMBFJ305

MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 31

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MM9N090P, MMBF0202PLT1, MMBF2202PT1, MMBFJ108, MMBFJ110, MMBFJ111, MMBFJ112, MMBFJ113, 5N60, MMD50R380PRH, MMD60R360PRH, MMD60R580PRH, MMD60R750PRH, MMD60R900PRH, MMD70R1K4PRH, MMD70R600PRH, MMD70R750PRH