Справочник MOSFET. MMF60R190PTH

 

MMF60R190PTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMF60R190PTH
   Маркировка: 60R190P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 51 nC
   trⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 1250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MMF60R190PTH

 

 

MMF60R190PTH Datasheet (PDF)

 ..1. Size:1243K  magnachip
 mmf60r190pth.pdf

MMF60R190PTH MMF60R190PTH

MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:279K  inchange semiconductor
 mmf60r190pth.pdf

MMF60R190PTH MMF60R190PTH

isc N-Channel MOSFET Transistor MMF60R190PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 5.1. Size:1588K  magnachip
 mmf60r190qth.pdf

MMF60R190PTH MMF60R190PTH

MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:279K  inchange semiconductor
 mmf60r190qth.pdf

MMF60R190PTH MMF60R190PTH

isc N-Channel MOSFET Transistor MMF60R190QTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 7.1. Size:1287K  magnachip
 mmf60r115pth.pdf

MMF60R190PTH MMF60R190PTH

MMF60R115P Datasheet MMF60R115P 600V 0.115 N-channel MOSFET Description MMF60R115P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 7.2. Size:279K  inchange semiconductor
 mmf60r115pth.pdf

MMF60R190PTH MMF60R190PTH

isc N-Channel MOSFET Transistor MMF60R115PTHFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.115(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

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