MMF60R290PTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMF60R290PTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 33 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 44 ns
Выходная емкость (Cd): 858 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.29 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MMF60R290PTH
MMF60R290PTH Datasheet (PDF)
mmf60r290pth.pdf
MMF60R290P Datasheet MMF60R290P 600V 0.29 N-channel MOSFET Description MMF60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r290pth.pdf
isc N-Channel MOSFET Transistor MMF60R290PTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmf60r280q.pdf
MMF60R280Q Datasheet MMF60R280Q 600V 0.28 N-channel MOSFET Description MMF60R280Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r280qbth.pdf
MMF60R280QB Datasheet MMF60R280QB 600V 0.28 N-channel MOSFET Description MMF60R280QB is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmf60r280qth.pdf
isc N-Channel MOSFET Transistor MMF60R280QTHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
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