IXTH31N20MA - описание и поиск аналогов

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continu

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 150 C 3N120 1200 V 3N110 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V

VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra

High Voltage VDSS = 1500V IXTH3N150 ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Dr

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET RDS(on) 200 m IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS

Preliminary Data Sheet VDSS ID25 RDS(on) MegaMOSTMFET IXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement Mode IXTH 30N50 500 V 30 A 0.17 TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) 30N45 450 V VDSS TJ = 25 C to 150 C 30N50 500 V 30N45 450 V VDGR TJ = 25 C to 150 C; RGS = 1 M 30N50 500 V TO-247 SMD ( ...S ) VGS Continuous 20 V VGSM Transient 30 V ID

Preliminary Technical Information X-Class VDSS = 650V IXTP32N65X Power MOSFET ID25 = 32A IXTQ32N65X RDS(on) 135m IXTH32N65X N-Channel Enhancement Mode TO-220AB (IXTP) G D Tab S Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G VGSS Continuous 30 V

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB)

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous

Advance Technical Information Standard VDSS = 250 V IXTH 30N25 ID (cont) = 30 A Power MOSFET RDS(on) = 75 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C30 A IDM TC = 25 C, pulse wid

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFET IXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V VGSM Tra

Advance Technical Information X2-Class VDSS = 650V IXTH34N65X2 Power MOSFET ID25 = 34A RDS(on) 105m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Contin

X2-Class VDSS = 650V IXTP34N65X2 Power MOSFET ID25 = 34A IXTH34N65X2 RDS(on) 96m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXTH) VGSM Transient 40 V ID

Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode RDS(on) = 75 m Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C; RGS = 1 M -100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -36 A IDM TC

Advance Technical Information High Voltage VDSS = 2000V IXTT3N200P3HV Power MOSFET ID25 = 3A IXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M 2000 V VGSS Continuous 20 V VG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH30N50L FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc N-Channel MOSFET Transistor IXTH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V