Справочник MOSFET. MMF80R1K2PTH

 

MMF80R1K2PTH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MMF80R1K2PTH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 21.2 ns
   Cossⓘ - Выходная емкость: 398 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для MMF80R1K2PTH

   - подбор ⓘ MOSFET транзистора по параметрам

 

MMF80R1K2PTH Datasheet (PDF)

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MMF80R1K2PTH

MMF80R1K2P Datasheet MMF80R1K2P 800V 1.2 N-channel MOSFET Description MMF80R1K2P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 ..2. Size:279K  inchange semiconductor
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MMF80R1K2PTH

isc N-Channel MOSFET Transistor MMF80R1K2PTHFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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MMF80R1K2PTH

isc N-Channel MOSFET Transistor MMF80R1K2PFEATURES Drain-source on-resistance:RDS(on) 1.2@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800

 8.1. Size:1446K  magnachip
mmf80r900pcth.pdfpdf_icon

MMF80R1K2PTH

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

Другие MOSFET... MMF60R190PTH , MMF60R290PTH , MMF60R360PTH , MMF60R580PTH , MMF60R750PTH , MMF65R190PTH , MMF70R600PTH , MMF70R900PTH , IRF9640 , MMF80R900PTH , MMFT107T1 , MMFT2406T1 , MMFT2955ET1 , MMFT2N02ELT1 , MMFT5P03HDT1 , MMFT60R115PCTH , MMFT60R195PTH .

History: BRCS065N08SHRA | QM6006D

 

 
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