MMF80R900PTH. Аналоги и основные параметры
Наименование производителя: MMF80R900PTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 29.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 22.4 ns
Cossⓘ - Выходная емкость: 508 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MMF80R900PTH
- подборⓘ MOSFET транзистора по параметрам
MMF80R900PTH даташит
mmf80r900pth.pdf
MMF80R900P Datasheet MMF80R900P 800V 0.9 N-channel MOSFET Description MMF80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf80r900pth.pdf
isc N-Channel MOSFET Transistor MMF80R900PTH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
mmf80r900pcth.pdf
MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf80r900pbth.pdf
MMF80R900PB Datasheet MMF80R900PB 800V 0.9 N-channel MOSFET Description MMF80R900PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
Другие IGBT... MMF60R290PTH, MMF60R360PTH, MMF60R580PTH, MMF60R750PTH, MMF65R190PTH, MMF70R600PTH, MMF70R900PTH, MMF80R1K2PTH, EMB04N03H, MMFT107T1, MMFT2406T1, MMFT2955ET1, MMFT2N02ELT1, MMFT5P03HDT1, MMFT60R115PCTH, MMFT60R195PTH, MMFT60R290PCTH
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