Справочник MOSFET. MMIS60R580PTH

 

MMIS60R580PTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMIS60R580PTH
   Маркировка: 60R580P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18 nC
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 428 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для MMIS60R580PTH

 

 

MMIS60R580PTH Datasheet (PDF)

 ..1. Size:1191K  magnachip
 mmis60r580pth.pdf

MMIS60R580PTH MMIS60R580PTH

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 3.1. Size:1038K  magnachip
 mmis60r580p.pdf

MMIS60R580PTH MMIS60R580PTH

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 7.1. Size:1257K  magnachip
 mmis60r750pth.pdf

MMIS60R580PTH MMIS60R580PTH

MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 7.2. Size:1149K  magnachip
 mmis60r900pth.pdf

MMIS60R580PTH MMIS60R580PTH

MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

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