MMP4407 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMP4407
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 46.64 nC
trⓘ - Время нарастания: 8.56 ns
Cossⓘ - Выходная емкость: 380.67 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: SOP-8
MMP4407 Datasheet (PDF)
mmp4407.pdf
MMP4407Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-10A = 20mRDS(ON), Vgs@-4.5V, Ids@-7A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and
mmp4415a.pdf
MMP4415AData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unl
mmp4411.pdf
MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25
mmp4411dy.pdf
MMP4411DYData SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-13.0A = 10mRDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristic
mmp4425dy.pdf
MMP4425DYData SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-11A = 14mRDS(ON), Vgs@-4.5V, Ids@-8.5A = 20mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA
mmp4425.pdf
MMP4425Data SheetM-MOS Semiconductor Hong Kong Limited38V P-Channel Enhancement-Mode MOSFETVDS= -38VRDS(ON), Vgs@-10V, Ids@-14A = 15mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)Parameter
mmp4435bdy.pdf
MMP4435BDYPackage Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-9.1A = 20mRDS(ON), Vgs@-4.5V, Ids@-6.9A = 35mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteri
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918