MMP60R290PCTH. Аналоги и основные параметры
Наименование производителя: MMP60R290PCTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 679 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: TO-220
Аналог (замена) для MMP60R290PCTH
- подборⓘ MOSFET транзистора по параметрам
MMP60R290PCTH даташит
mmp60r290pcth.pdf
MMP60R290PC Datasheet MMP60R290PC 600V 0.29 N-channel MOSFET Description MMP60R290PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmp60r290pth.pdf
MMP60R290P Datasheet MMP60R290P 600V 0.29 N-channel MOSFET Description MMP60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmp60r195pcth.pdf
MMP60R195PC Datasheet MMP60R195PC 600V 0.195 N-channel MOSFET Description MMP60R195PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmp60r750pth.pdf
MMP60R750P Datasheet MMP60R750P 600V 0.75 N-channel MOSFET Description MMP60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Другие IGBT... MMP4411, MMP4411DY, MMP4415A, MMP4425, MMP4425DY, MMP4435BDY, MMP60R190PTH, MMP60R195PCTH, IRF830, MMP60R290PTH, MMP60R360PTH, MMP60R580PTH, MMP60R750PTH, MMP6463, MMP6465, MMP65R190PTH, MMP6965
History: SM6A23NSU | 2SK3134L
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