MMQ60R070PTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMQ60R070PTH
Маркировка: 60R070P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 391 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 53 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 132 nC
Время нарастания (tr): 200 ns
Выходная емкость (Cd): 2965 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm
Тип корпуса: TO-247
Аналог (замена) для MMQ60R070PTH
MMQ60R070PTH Datasheet (PDF)
mmq60r070pth.pdf
MMQ60R070P Datasheet MMQ60R070P 600V 0.07 N-channel MOSFET Description MMQ60R070P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmq60r115pcth.pdf
MMQ60R115PC Datasheet MMQ60R115PC 600V 0.115 N-channel MOSFET Description MMQ60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmq60r190pth.pdf
MMQ60R190P Datasheet MMQ60R190P 600V 0.19 N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmq60r115pth.pdf
MMQ60R115P Datasheet MMQ60R115P 600V 0.115 N-channel MOSFET Description MMQ60R115P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
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