MMQ60R190PTH. Аналоги и основные параметры
Наименование производителя: MMQ60R190PTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 154 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 1250 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO-247
Аналог (замена) для MMQ60R190PTH
- подборⓘ MOSFET транзистора по параметрам
MMQ60R190PTH даташит
mmq60r190pth.pdf
MMQ60R190P Datasheet MMQ60R190P 600V 0.19 N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmq60r115pcth.pdf
MMQ60R115PC Datasheet MMQ60R115PC 600V 0.115 N-channel MOSFET Description MMQ60R115PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmq60r115pth.pdf
MMQ60R115P Datasheet MMQ60R115P 600V 0.115 N-channel MOSFET Description MMQ60R115P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmq60r070pth.pdf
MMQ60R070P Datasheet MMQ60R070P 600V 0.07 N-channel MOSFET Description MMQ60R070P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Другие IGBT... MMP7277, MMP7401, MMP9435, MMP9435BDY, MMP9567, MMQ60R070PTH, MMQ60R115PCTH, MMQ60R115PTH, IRF540N, MMSF3P02HDR2, MMSF7P03HDR2, SM2A06NSU, SM3005NSF, SM3114NAU, SM3115NSU, SM3116NBU, SM3116NSU
History: AM40P03-20D | WMO120N04TS | WMO190N15HG4 | SPP15P10PH | RHP030N03 | WMO15N10T1 | WMO25N10T1
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