Справочник MOSFET. SM8007NSF

 

SM8007NSF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM8007NSF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 66 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для SM8007NSF

 

 

SM8007NSF Datasheet (PDF)

 ..1. Size:236K  sino
 sm8007nsf.pdf

SM8007NSF SM8007NSF

SM8007NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/66A,RDS(ON)=12m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8007NS F

 6.1. Size:263K  sino
 sm8007nsu.pdf

SM8007NSF SM8007NSF

SM8007NSU N-Channel Enhancement Mode MOSFETFeatures Pin Configuration 80V/66A,DRDS(ON) = 12m (max.) @ VGS = 10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8007

 9.1. Size:235K  sino
 sm8005dsk.pdf

SM8007NSF SM8007NSF

SM8005DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 80V/4.4A,D2 RDS(ON)= 54m (max.) @ VGS= 10V RDS(ON)= 63m (max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 LED Application System.S1 S2

 9.2. Size:263K  sino
 sm8008nsu.pdf

SM8007NSF SM8007NSF

SM8008NSU N-Channel Enhancement Mode MOSFETFeatures Pin Configuration 80V/28A,DRDS(ON) = 35m (max.) @ VGS = 10VSRDS(ON )= 43m (max.) @ VGS = 5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG LCD Application System.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8008NS U : T

 9.3. Size:261K  sino
 sm8008nsk.pdf

SM8007NSF SM8007NSF

SM8008NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 80V/8A,DD RDS(ON)= 29m (max.) @ VGS= 10V RDS(ON)= 34m (max.) @ VGS= 4.5VSS Reliable and RuggedSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G LCD Application System. LED TV Backlight Module.S S S(1, 2, 3)N-Cha

 9.4. Size:251K  sino
 sm8003nf.pdf

SM8007NSF SM8007NSF

SM8003NF N-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/70A,RDS(ON)=11m (max.) @ VGS=10V Reliable and Rugged SDG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8003N F : TO

 9.5. Size:263K  sino
 sm8009nsf.pdf

SM8007NSF SM8007NSF

SM8009NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/130A,RDS(ON)= 5.3m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8009NS

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