Справочник MOSFET. 2SJ544

 

2SJ544 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ544
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 1300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для 2SJ544

 

 

2SJ544 Datasheet (PDF)

 ..1. Size:88K  renesas
2sj544.pdf

2SJ544
2SJ544

2SJ544 Silicon P Channel MOS FET REJ03G0891-0300 (Previous: ADE-208-648A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Fla

 0.1. Size:101K  renesas
rej03g0891 2sj544ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:90K  renesas
2sj545.pdf

2SJ544
2SJ544

2SJ545 Silicon P Channel MOS FET REJ03G0892-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. GateG2. Drain3. Source123SRev.4.0

 9.2. Size:97K  renesas
2sj549.pdf

2SJ544
2SJ544

2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package

 9.3. Size:90K  renesas
2sj540.pdf

2SJ544
2SJ544

2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Flange)3. Source123SRe

 9.4. Size:88K  renesas
2sj547.pdf

2SJ544
2SJ544

2SJ547 Silicon P Channel MOS FET REJ03G0894-0300 (Previous: ADE-208-658A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG2. Drain3. Source123SRev.3.00

 9.5. Size:110K  renesas
rej03g0896 2sj549lsds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:101K  renesas
rej03g0889 2sj542ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:88K  renesas
2sj543.pdf

2SJ544
2SJ544

2SJ543 Silicon P Channel MOS FET REJ03G0890-0400 (Previous: ADE-208-652B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Fla

 9.8. Size:102K  renesas
rej03g0894 2sj547ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.9. Size:101K  renesas
rej03g0888 2sj541ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:102K  renesas
rej03g0895 2sj548ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.11. Size:101K  renesas
rej03g0890 2sj543ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.12. Size:88K  renesas
2sj546.pdf

2SJ544
2SJ544

2SJ546 Silicon P Channel MOS FET REJ03G0893-0300 (Previous: ADE-208-638A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. GateG2. Drain

 9.13. Size:103K  renesas
rej03g0887 2sj540ds.pdf

2SJ544
2SJ544

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.14. Size:88K  renesas
2sj541.pdf

2SJ544
2SJ544

2SJ541 Silicon P Channel MOS FET REJ03G0888-0400 (Previous: ADE-208-590B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Fla

 9.15. Size:87K  renesas
2sj542.pdf

2SJ544
2SJ544

2SJ542 Silicon P Channel MOS FET REJ03G0889-0400 (Previous: ADE-208-591B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Fla

Другие MOSFET... 2SJ533 , 2SJ534 , 2SJ535 , 2SJ539 , 2SJ540 , 2SJ541 , 2SJ542 , 2SJ543 , 5N65 , 2SJ545 , 2SJ546 , 2SJ547 , 2SJ548 , 2SJ549 , 2SJ550 , 2SJ551 , 2SJ552 .

 

 
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