VN0605T - Даташиты. Аналоги. Основные параметры
Наименование производителя: VN0605T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.18 A
Tj ⓘ - Максимальная температура канала: 150 °C
ton ⓘ - Время включения: 20 ns
Cossⓘ - Выходная емкость: 25 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: SOT-23
Аналог (замена) для VN0605T
VN0605T Datasheet (PDF)
vn10lls vn0605t vn0610ll vn2222ll.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W
vn0605t vn10le vn10lm vn2222lm.pdf

VN10/0605/0610/2222 SeriesN-Channel Enhancement-Mode MOSFET TransistorsVN10LE VN0605T VN2222LLVN10LM VN0610LL VN2222LMProduct SummaryPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.186060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 7.5 @ VGS
tn0601l vn0606l vn66afd.pdf

TN0601L, VN0606L, VN66AFDVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 1.2 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMO
vn0606.pdf

Supertex inc. VN0606N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h
Другие MOSFET... VN0335N5 , VN0335ND , VN0340N1 , VN0340N5 , VN0360N1 , VN0360N5 , VN0360ND , VN0550 , IRFP260 , VN0606 , VN0610LL , VN0660N3 , VN0660N5 , VN0808 , VN10K , VN10KCSM4 , VN10K-TO18 .
History: FDT86246 | VN0606 | VN0660N3 | VN0340N1 | 2SJ134 | PHP3055L | BSC160N15NS5
History: FDT86246 | VN0606 | VN0660N3 | VN0340N1 | 2SJ134 | PHP3055L | BSC160N15NS5



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