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VN10LE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VN10LE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.38 A
   Tjⓘ - Максимальная температура канала: 150 °C
   tonⓘ - Время включения: 10 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO-52

 Аналог (замена) для VN10LE

 

 

VN10LE Datasheet (PDF)

 ..1. Size:47K  siliconix
 vn0605t vn10le vn10lm vn2222lm.pdf

VN10LE VN10LE

VN10/0605/0610/2222 SeriesN-Channel Enhancement-Mode MOSFET TransistorsVN10LE VN0605T VN2222LLVN10LM VN0610LL VN2222LMProduct SummaryPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.186060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 7.5 @ VGS

 9.1. Size:53K  motorola
 vn10lm.rev1.pdf

VN10LE VN10LE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN10LM/DTMOS FET TransistorVN10LMNChannel Enhancement3 DRAIN2GATE1 SOURCE123CASE 2905, STYLE 22TO92 (TO226AE)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 Vpk

 9.2. Size:47K  vishay
 vn0610ll vn10lls.pdf

VN10LE VN10LE

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

 9.3. Size:75K  vishay
 vn10lls,0605t,0610ll,2222ll.pdf

VN10LE VN10LE

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel Enhancement-Mode MOSFET TransistorsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18606060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD

 9.4. Size:51K  vishay
 vn10lls vn0605t vn0610ll vn2222ll.pdf

VN10LE VN10LE

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

 9.5. Size:33K  diodes
 vn10lp.pdf

VN10LE VN10LE

N-CHANNEL ENHANCEMENTVN10LPMODE VERTICAL DMOS FETISSUE 2 NOVEMBER 2005FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 270 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower D

 9.6. Size:24K  diodes
 vn10lf.pdf

VN10LE

SOT23 N-CHANNEL ENHANCEMENTVN10LFMODE VERTICAL DMOS FETISSUE 2 JANUARY 1996FEATURES* 60 Volt VDSS* RDS(on)=5DPARTMARKING DETAIL MYGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb = 25

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