VN2222LLG - описание и поиск аналогов

VN2222LLG Small Signal MOSFET 150 mAmps, 60 Volts N-Channel TO-92 http //onsemi.com http //onsemi.com Features This is a Pb-Free Device* 150 mA, 60 V RDS(on) = 7.5 W MAXIMUM RATINGS N-Channel Rating Symbol Value Unit D Drain -Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate-Source Voltage G - Continuous VGS 20 Vdc - Non-repetitive (tp 5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN2222LL/D TMOS FET Transistor N Channel Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 Drain Source Voltage VDSS 60 Vdc 2 3 Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc CASE 29 04, STYLE 22 Gate Source Voltage TO 92 (TO 226AA)

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2.5 W

N-CHANNEL ENHANCEMENT VN2222LL MODE VERTICAL DMOS FET ISSUE 2 FEB 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb = 25 C ID 150 mA Pulsed Drain Current IDM 1A Gate Source Voltage VGS 40 V Power Dissipation at Tamb = 25 C Ptot 400 mW Operating and Storage Temperature Range Tj Tstg -55 to