VN2222LLG - Даташиты. Аналоги. Основные параметры

VN2222LLGSmall Signal MOSFET150 mAmps, 60 VoltsN-Channel TO-92http://onsemi.comhttp://onsemi.comFeatures This is a Pb-Free Device*150 mA, 60 VRDS(on) = 7.5 WMAXIMUM RATINGSN-ChannelRating Symbol Value UnitDDrain -Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGate-Source VoltageG- Continuous VGS 20 Vdc- Non-repetitive (tp 5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2222LL/DTMOS FET TransistorNChannel EnhancementVN2222LL3 DRAINMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 60 Vdc23DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcCASE 2904, STYLE 22GateSource VoltageTO92 (TO226AA)

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

N-CHANNEL ENHANCEMENTVN2222LLMODE VERTICAL DMOS FETISSUE 2 FEB 94S G DTO92ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 1AGate Source Voltage VGS 40 VPower Dissipation at Tamb = 25C Ptot 400 mWOperating and Storage Temperature Range Tj:Tstg -55 to