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HAF1004S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HAF1004S
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7600 ns
   Cossⓘ - Выходная емкость: 326 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: DPAK-2

 Аналог (замена) для HAF1004S

 

 

HAF1004S Datasheet (PDF)

 ..1. Size:75K  hitachi
 haf1004l haf1004s.pdf

HAF1004S HAF1004S

HAF1004(L), HAF1004(S)Silicon P Channel MOS FET SeriesPower SwitchingADE-208-629B (Z)3rd. EditionMay 2002DescriptionThis FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temp

 ..2. Size:1643K  cn vbsemi
 haf1004s.pdf

HAF1004S HAF1004S

HAF1004Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

 8.1. Size:200K  renesas
 haf1002l haf1002s.pdf

HAF1004S HAF1004S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:56K  hitachi
 haf1003l haf1003s.pdf

HAF1004S HAF1004S

HAF1003(L), HAF1003(S)Silicon P Channel MOS FET Series Power SwitchingADE-208-626B (Z)3rd. EditionJuly 2000This FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temperature lik

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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