HFD2N60S. Аналоги и основные параметры

Наименование производителя: HFD2N60S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 44 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 37 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm

Тип корпуса: D-PAK

Аналог (замена) для HFD2N60S

- подборⓘ MOSFET транзистора по параметрам

 

HFD2N60S даташит

 ..1. Size:160K  semihow
 hfd2n60s.pdf pdf_icon

HFD2N60S

March 2014 BVDSS = 600 V RDS(on) typ HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N60S HFU2N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC

 ..2. Size:230K  semihow
 hfd2n60s hfu2n60s.pdf pdf_icon

HFD2N60S

March 2014 BVDSS = 600 V RDS(on) typ HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N60S HFU2N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC

 7.1. Size:381K  semihow
 hfd2n60u hfu2n60u.pdf pdf_icon

HFD2N60S

June 2015 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (T

 7.2. Size:199K  semihow
 hfd2n60u.pdf pdf_icon

HFD2N60S

Jan 2014 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HCU7NE70S, HFA9N90, HFB1N60S, HFB1N65S, HFB1N70S, HFD1N60S, HFD1N65S, HFD2N60, SI2302, HFD2N60U, HFD2N65S, HFD2N65U, HFD2N70S, HFD2N90, HFD3N80, HFD4N50, HFD5N40