Справочник MOSFET. HFD2N60S

 

HFD2N60S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HFD2N60S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 37 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: D-PAK
 

 Аналог (замена) для HFD2N60S

   - подбор ⓘ MOSFET транзистора по параметрам

 

HFD2N60S Datasheet (PDF)

 ..1. Size:160K  semihow
 hfd2n60s.pdf pdf_icon

HFD2N60S

March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC

 ..2. Size:230K  semihow
 hfd2n60s hfu2n60s.pdf pdf_icon

HFD2N60S

March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC

 7.1. Size:381K  semihow
 hfd2n60u hfu2n60u.pdf pdf_icon

HFD2N60S

June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T

 7.2. Size:199K  semihow
 hfd2n60u.pdf pdf_icon

HFD2N60S

Jan 2014BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HCU7NE70S , HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , IRFZ46N , HFD2N60U , HFD2N65S , HFD2N65U , HFD2N70S , HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 .

History: DMN3730UFB-7 | BUK7Y25-80E | HTM200P03 | SI4401BDY | AOT14N50FD | SI2341 | CJP05N60

 

 
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