HFD5N70U. Аналоги и основные параметры
Наименование производителя: HFD5N70U
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 60 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.2 Ohm
Тип корпуса: D-PAK
Аналог (замена) для HFD5N70U
- подборⓘ MOSFET транзистора по параметрам
HFD5N70U даташит
..1. Size:209K semihow
hfd5n70u.pdf 
Jan 2014 BVDSS = 700 V RDS(on) typ = 2.7 HFD5N70U / HFU5N70U ID = 3.6 A 700V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N70U HFU5N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC
7.1. Size:169K semihow
hfd5n70s.pdf 
Jan 2013 BVDSS = 700 V RDS(on) typ HFD5N70S / HFU5N70S ID = 3.8 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N70S HFU5N70S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC
9.1. Size:199K semihow
hfd5n40.pdf 
July 2005 BVDSS = 400 V RDS(on) typ HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N40 HFU5N40 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ
9.2. Size:205K semihow
hfd5n60s.pdf 
Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ
9.3. Size:324K semihow
hfd5n60s hfu5n60s.pdf 
June 2015 BVDSS = 600 V RDS(on) typ HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC
9.4. Size:276K semihow
hfd5n50s.pdf 
OCT 2009 BVDSS = 500 V RDS(on) typ HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N50S HFU5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC
9.5. Size:209K semihow
hfd5n65u.pdf 
Jan 2014 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65U / HFU5N65U ID = 3.6 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N65U HFU5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC
9.6. Size:276K semihow
hfd5n50s hfu5n50s.pdf 
OCT 2009 BVDSS = 500 V RDS(on) typ HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N50S HFU5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC
9.7. Size:210K semihow
hfd5n60u.pdf 
Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC
9.8. Size:207K semihow
hfd5n50u.pdf 
Jan 2014 BVDSS = 500 V RDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (
9.9. Size:357K semihow
hfd5n60u hfu5n60u.pdf 
June 2015 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC
9.10. Size:199K semihow
hfd5n40 hfu5n40.pdf 
July 2005 BVDSS = 400 V RDS(on) typ HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N40 HFU5N40 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ
9.11. Size:287K semihow
hfd5n50u hfu5n50u.pdf 
June 2015 BVDSS = 500 V RDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC
9.12. Size:1121K semihow
hfu5n65sa hfd5n65sa.pdf 
May. 2022 HFU5N65SA / HFD5N65SA 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 4.2 A Excellent Switching Characteristics RDS(on), Typ 2.3 100% Avalanche Tested Qg, Typ 14.2 nC RoHS Compliant HFU5N65SA HFD5N65SA Symbol TO
9.13. Size:291K semihow
hfu5n60f hfd5n60f.pdf 
Oct 2016 HFU5N60F / HFD5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFU5N60F HFD5N60F Symbol TO-251 TO-252 D S S D G G Absolute Maximum Ratings TC=25 unles
9.14. Size:204K semihow
hfd5n65s.pdf 
Mar 2010 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N65S HFU5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ
Другие IGBT... HFD5N40, HFD5N50S, HFD5N50U, HFD5N60S, HFD5N60U, HFD5N65S, HFD5N65U, HFD5N70S, 7N60, HFD630, HFD6N60U, HFD6N65U, HFD6N70U, HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80
