2SJ547 - Аналоги. Основные параметры
Наименование производителя: 2SJ547
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 20
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 45
ns
Cossⓘ - Выходная емкость: 220
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.21
Ohm
Тип корпуса:
TO220FM
Аналог (замена) для 2SJ547
-
подбор ⓘ MOSFET транзистора по параметрам
2SJ547 технические параметры
..1. Size:88K renesas
2sj547.pdf 

2SJ547 Silicon P Channel MOS FET REJ03G0894-0300 (Previous ADE-208-658A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.3.00
0.1. Size:102K renesas
rej03g0894 2sj547ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:90K renesas
2sj545.pdf 

2SJ545 Silicon P Channel MOS FET REJ03G0892-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.4.0
9.2. Size:97K renesas
2sj549.pdf 

2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK (L) ) (Package
9.3. Size:90K renesas
2sj540.pdf 

2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Re
9.4. Size:110K renesas
rej03g0896 2sj549lsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:101K renesas
rej03g0889 2sj542ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:88K renesas
2sj543.pdf 

2SJ543 Silicon P Channel MOS FET REJ03G0890-0400 (Previous ADE-208-652B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Fla
9.7. Size:88K renesas
2sj544.pdf 

2SJ544 Silicon P Channel MOS FET REJ03G0891-0300 (Previous ADE-208-648A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Fla
9.8. Size:101K renesas
rej03g0888 2sj541ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.9. Size:102K renesas
rej03g0895 2sj548ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.10. Size:101K renesas
rej03g0890 2sj543ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.11. Size:88K renesas
2sj546.pdf 

2SJ546 Silicon P Channel MOS FET REJ03G0893-0300 (Previous ADE-208-638A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain
9.12. Size:103K renesas
rej03g0887 2sj540ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.13. Size:101K renesas
rej03g0891 2sj544ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.14. Size:88K renesas
2sj541.pdf 

2SJ541 Silicon P Channel MOS FET REJ03G0888-0400 (Previous ADE-208-590B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Fla
9.15. Size:87K renesas
2sj542.pdf 

2SJ542 Silicon P Channel MOS FET REJ03G0889-0400 (Previous ADE-208-591B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Fla
Другие MOSFET... 2SJ539
, 2SJ540
, 2SJ541
, 2SJ542
, 2SJ543
, 2SJ544
, 2SJ545
, 2SJ546
, IRFP064N
, 2SJ548
, 2SJ549
, 2SJ550
, 2SJ551
, 2SJ552
, 2SJ553
, 2SJ554
, 2SJ555
.