HFP10N60S. Аналоги и основные параметры

Наименование производителя: HFP10N60S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 156 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 69 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm

Тип корпуса: TO-220

Аналог (замена) для HFP10N60S

- подборⓘ MOSFET транзистора по параметрам

 

HFP10N60S даташит

 ..1. Size:189K  semihow
 hfp10n60s.pdf pdf_icon

HFP10N60S

Nov 2007 BVDSS = 600 V RDS(on) typ HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(

 6.1. Size:201K  semihow
 hfp10n60u.pdf pdf_icon

HFP10N60S

Feb 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFP10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:172K  semihow
 hfp10n65s.pdf pdf_icon

HFP10N60S

March 2014 BVDSS = 650 V RDS(on) typ HFP10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L

 7.2. Size:201K  semihow
 hfp10n65u.pdf pdf_icon

HFP10N60S

March 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFP10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HFH13N80, HFH18N50S, HFH19N60, HFH6N90, HFH7N80, HFI50N06, HFI640, HFN6N70U, IRFZ44N, HFP10N60U, HFP10N65S, HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, HFP12N65S