HFS2N60S - Даташиты. Аналоги. Основные параметры

March 2014BVDSS = 600 VRDS(on) typ HFS2N60SID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area

July 2005BVDSS = 600 VRDS(on) typ HFS2N60ID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

Oct 2016HFS2N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC Single Gauge Package TO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Paramete

Nov 2013BVDSS = 600 VRDS(on) typ HFS2N60U ID = 2 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower