Справочник MOSFET. HFS2N65U

 

HFS2N65U MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFS2N65U
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 23 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5.5 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.5 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для HFS2N65U

 

 

HFS2N65U Datasheet (PDF)

 ..1. Size:302K  semihow
 hfs2n65u.pdf

HFS2N65U HFS2N65U

Nov 2013BVDSS = 650 VRDS(on) typ = 5 HFS2N65U ID = 2 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

 7.1. Size:182K  semihow
 hfs2n65s.pdf

HFS2N65U HFS2N65U

Sep 2009BVDSS = 650 VRDS(on) typ HFS2N65SID = 1.8 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 8.1. Size:150K  semihow
 hfs2n60.pdf

HFS2N65U HFS2N65U

July 2005BVDSS = 600 VRDS(on) typ HFS2N60ID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 8.2. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf

HFS2N65U HFS2N65U

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 8.3. Size:163K  semihow
 hfs2n60s.pdf

HFS2N65U HFS2N65U

March 2014BVDSS = 600 VRDS(on) typ HFS2N60SID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area

 8.4. Size:356K  semihow
 hfs2n60fs.pdf

HFS2N65U HFS2N65U

Oct 2016HFS2N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC Single Gauge Package TO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Paramete

 8.5. Size:182K  semihow
 hfs2n60u.pdf

HFS2N65U HFS2N65U

Nov 2013BVDSS = 600 VRDS(on) typ HFS2N60U ID = 2 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

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