Справочник MOSFET. HFS2N70S

 

HFS2N70S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFS2N70S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.2 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для HFS2N70S

 

 

HFS2N70S Datasheet (PDF)

 ..1. Size:179K  semihow
 hfs2n70s.pdf

HFS2N70S HFS2N70S

Dec 2009BVDSS = 700 VRDS(on) typ HFS2N70SID = 1.6 A700V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS

 9.1. Size:150K  semihow
 hfs2n60.pdf

HFS2N70S HFS2N70S

July 2005BVDSS = 600 VRDS(on) typ HFS2N60ID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 9.2. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf

HFS2N70S HFS2N70S

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 9.3. Size:302K  semihow
 hfs2n65u.pdf

HFS2N70S HFS2N70S

Nov 2013BVDSS = 650 VRDS(on) typ = 5 HFS2N65U ID = 2 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

 9.4. Size:163K  semihow
 hfs2n60s.pdf

HFS2N70S HFS2N70S

March 2014BVDSS = 600 VRDS(on) typ HFS2N60SID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area

 9.5. Size:356K  semihow
 hfs2n60fs.pdf

HFS2N70S HFS2N70S

Oct 2016HFS2N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC Single Gauge Package TO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Paramete

 9.6. Size:182K  semihow
 hfs2n65s.pdf

HFS2N70S HFS2N70S

Sep 2009BVDSS = 650 VRDS(on) typ HFS2N65SID = 1.8 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 9.7. Size:202K  semihow
 hfs2n90.pdf

HFS2N70S HFS2N70S

Feb 2014BVDSS = 900 VRDS(on) typ HFS2N90ID = 2.2 A900V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area

 9.8. Size:182K  semihow
 hfs2n60u.pdf

HFS2N70S HFS2N70S

Nov 2013BVDSS = 600 VRDS(on) typ HFS2N60U ID = 2 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

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