Справочник MOSFET. HFS4N50

 

HFS4N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFS4N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для HFS4N50

 

 

HFS4N50 Datasheet (PDF)

 ..1. Size:236K  semihow
 hfs4n50.pdf

HFS4N50 HFS4N50

July 2005BVDSS = 500 VRDS(on) typ HFS4N50ID = 3.4 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lo

 9.1. Size:406K  semihow
 hfp4n60f hfs4n60f.pdf

HFS4N50 HFS4N50

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 9.2. Size:177K  semihow
 hfs4n60.pdf

HFS4N50 HFS4N50

July 2005BVDSS = 600 VRDS(on) typ HFS4N60ID = 4.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(

 9.3. Size:369K  semihow
 hfs4n60fs.pdf

HFS4N50 HFS4N50

Oct 2016HFS4N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC Single Gauge PackageTO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter

 9.4. Size:191K  semihow
 hfs4n90.pdf

HFS4N50 HFS4N50

March 2014BVDSS = 900 VRDS(on) typ HFS4N90ID = 4.0 A900V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area

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