HFS5N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HFS5N80
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 47 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 30 nC
Время нарастания (tr): 85 ns
Выходная емкость (Cd): 100 pf
Сопротивление сток-исток открытого транзистора (Rds): 2.6 Ohm
Тип корпуса: TO-220F
HFS5N80 Datasheet (PDF)
hfs5n80.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
May 2013BVDSS = 800 VRDS(on) typ HFS5N80ID = 5.0 A800V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area
hfs5n70s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Aug 2012BVDSS = 700 VRDS(on) typ HFS5N70SID = 4.0 A700V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
hfs5n50s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
OCT 2008BVDSS = 500 VRDS(on) typ HFS5N50S ID = 5.0 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area
hfs5n65sa.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Dec. 2021BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SAID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14.2 nC (Typ.) Extended Safe Op
hfs5n50u.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
May 2012BVDSS = 500 VRDS(on) typ HFS5N50U ID = 5.0 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area L
hfs5n60u.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
May 2012BVDSS = 600 VRDS(on) typ HFS5N60UID = 4.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
hfp5n60f hfs5n60f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Oct 2016HFP5N60F / HFS5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFP5N60F HFS5N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unle
hfs5n65js.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Mar. 2023HFS5N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.0 A Excellent Switching CharacteristicsRDS(on), Typ 2.26 100% Avalanche TestedQg, Typ 12.7 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum
hfs5n65u.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
March 2013BVDSS = 650 VRDS(on) typ HFS5N65U ID = 4.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
hfs5n65s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Oct 2009BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )
hfs5n60s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Aug 2007BVDSS = 600 VRDS(on) typ HFS5N60SID = 4.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .