Справочник MOSFET. HFS6N60U

 

HFS6N60U Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HFS6N60U
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 54 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.66 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для HFS6N60U

   - подбор ⓘ MOSFET транзистора по параметрам

 

HFS6N60U Datasheet (PDF)

 ..1. Size:306K  semihow
hfs6n60u.pdfpdf_icon

HFS6N60U

July 2012BVDSS = 600 VRDS(on) typ HFS6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:306K  semihow
hfs6n65u.pdfpdf_icon

HFS6N60U

July 2012BVDSS = 650 VRDS(on) typ HFS6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 9.1. Size:173K  semihow
hfs6n90.pdfpdf_icon

HFS6N60U

Dec 2005BVDSS = 900 VRDS(on) typ HFS6N90ID = 6.0 A900V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

 9.2. Size:305K  semihow
hfs6n70u.pdfpdf_icon

HFS6N60U

March 2013BVDSS = 700 VRDS(on) typ = 1.8 HFS6N70U ID = 6.0 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

Другие MOSFET... HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , HFS640 , IRFZ48N , HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 .

History: YJL2312AL | AOT2146L

 

 
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