HFS6N60U Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HFS6N60U
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 80 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.66 Ohm
Тип корпуса: TO-220F
Аналог (замена) для HFS6N60U
HFS6N60U Datasheet (PDF)
hfs6n60u.pdf

July 2012BVDSS = 600 VRDS(on) typ HFS6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
hfs6n65u.pdf

July 2012BVDSS = 650 VRDS(on) typ HFS6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
hfs6n90.pdf

Dec 2005BVDSS = 900 VRDS(on) typ HFS6N90ID = 6.0 A900V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(
hfs6n70u.pdf

March 2013BVDSS = 700 VRDS(on) typ = 1.8 HFS6N70U ID = 6.0 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
Другие MOSFET... HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , HFS640 , IRFZ48N , HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 .
History: FCB125N65S3 | 4N80G-TF3-T | WMQ30N04TS | GSM4953S | QS5U23 | IRHLNM77110
History: FCB125N65S3 | 4N80G-TF3-T | WMQ30N04TS | GSM4953S | QS5U23 | IRHLNM77110



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